| PART |
Description |
Maker |
| 2SC5177 2SC5177-T1 2SC5177-T2 |
High fT, high gain transistor
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| 5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
| DXT690BP5-13 |
45V NPN HIGH GAIN TRANSISTOR PowerDI?5
45V NPN HIGH GAIN TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| AD806706 AD8067ARTZ-R2 AD8067ARTZ-REEL AD8067 |
High Gain Bandwidth Product, Precision Fast FET?Op Amp
High Gain Bandwidth Product, Precision Fast FET⑩ Op Amp
High Gain Bandwidth Product, Precision Fast FET?/a> Op Amp
High Gain Bandwidth Product, Precision FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial OP-AMP, 1000 uV OFFSET-MAX, PDSO5
|
Analog Devices, Inc.
|
| BCP72 |
PNP Silicon AF Power Transistor (For AF driver and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
